 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Philips Semiconductors Product specification Rectifier diodes ultrafast GENERAL DESCRIPTION Glass passivated high efficiency rectifier diodes in full pack, plastic envelopes, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential. BYW29F series QUICK REFERENCE DATA SYMBOL VRRM VF IF(AV) trr PARAMETER BYW29FRepetitive peak reverse voltage Forward voltage Forward current Reverse recovery time MAX. 100 100 0.895 8 25 MAX. 150 150 0.895 8 25 MAX. 200 200 0.895 8 25 UNIT V V A ns PINNING - SOD100 PIN 1 2 DESCRIPTION cathode anode PIN CONFIGURATION case SYMBOL a k case isolated 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IF(AV) PARAMETER Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage1 Average forward current2 square wave; = 0.5; Ths 106 C sinusoidal; a = 1.57; Ths 109 C CONDITIONS MIN. -40 -100 100 100 100 MAX. -150 150 150 150 8 7.3 11.3 16 80 88 32 150 150 -200 200 200 200 UNIT V V V A A A A A A A2s C C IF(RMS) IFRM IFSM I2t Tstg Tj RMS forward current Repetitive peak forward current t = 25 s; = 0.5; Ths 109 C Non-repetitive peak forward t = 10 ms current t = 8.3 ms sinusoidal; with reapplied VRWM(max) I2t for fusing t = 10 ms Storage temperature Operating junction temperature 1 Ths 141C for thermal stability. 2 Neglecting switching and reverse current losses October 1994 1 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast ISOLATION Ths = 25 C unless otherwise specified SYMBOL Visol Cisol PARAMETER Repetitive peak voltage from both terminals to external heatsink Capacitance from cathode to external heatsink CONDITIONS R.H. 65% ; clean and dustfree f = 1 MHz MIN. - BYW29F series TYP. 12 MAX. 1500 - UNIT V pF THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS with heatsink compound without heatsink compound in free air MIN. TYP. 55 MAX. 5.5 7.2 UNIT K/W K/W K/W STATIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL VF IR PARAMETER Forward voltage Reverse current CONDITIONS IF = 8 A; Tj = 150C IF = 8 A IF = 20 A VR = VRWM; Tj = 100 C VR = VRWM MIN. TYP. 0.80 0.92 1.1 0.3 2 MAX. 0.895 1.05 1.3 0.6 10 UNIT V V V mA A DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL Qs trr Irrm Vfr PARAMETER Reverse recovery charge Reverse recovery time Peak reverse recovery current Forward recovery voltage CONDITIONS IF = 2 A; VR 30 V; -dIF/dt = 20 A/s IF = 1 A; VR 30 V; -dIF/dt = 100 A/s IF = 10 A; VR 30 V; Tj = 100 C; -dIF/dt = 50 A/s IF = 1 A; dIF/dt = 10 A/s MIN. TYP. 4 20 1 1 MAX. 11 25 2 UNIT nC ns A V October 1994 2 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast BYW29F series I dI F dt F 8 7 PF / W Vo = 0.791 V Rs = 0.013 Ohms BYW29 Ths(max) / C a = 1.57 1.9 2.2 106 111.5 117 122.5 128 133.5 139 144.5 t 6 rr time 5 4 3 4 2.8 Q I R I s 10% 100% 2 1 rrm 0 0 1 2 3 4 IF(AV) / A 5 6 7 150 8 Fig.1. Definition of trr, Qs and Irrm Fig.4. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). trr / ns 1000 I F 100 IF=10A time IF=1A V F V V F time 10 fr 1 1 10 dIF/dt (A/us) 100 Fig.2. Definition of Vfr Fig.5. Maximum trr at Tj = 25 C. 12 10 8 6 PF / W Vo = 0.791 V Rs = 0.013 ohms BYW29 Ths(max) / C D = 1.0 84 95 trr / ns 1000 0.5 0.2 0.1 106 117 128 139 T t 100 IF=10A IF=1A 4 I tp D= tp T 10 2 0 0 2 4 6 IF(AV) / A 8 10 150 12 1 1 10 dIF/dt (A/us) 100 Fig.3. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x D. Fig.6. Maximum trr at Tj = 100 C. October 1994 3 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast BYW29F series 10 Irrm / A 100 Qs / nC IF=10A 1 IF=1A IF=10A 5A 2A 1A 10 0.1 0.01 1 10 -dIF/dt (A/us) 100 1.0 1.0 10 -dIF/dt (A/us) 100 Fig.7. Maximum Irrm at Tj = 25 C. Fig.10. Maximum Qs at Tj = 25 C. 10 Irrm / A 10 Zth j-hs (K/W) BYW29F IF=10A 1 IF=1A 1 0.1 0.1 D tp t 0.01 1 10 -dIF/dt (A/us) 100 0.01 10 us 1 ms tp / s 0.1 s 10 s Fig.8. Maximum Irrm at Tj = 100 C. Fig.11. Transient thermal impedance; Zth j-hs = f(tp). 30 IF / A Tj=150 C Tj=25 C BYW29 20 typ 10 max 0 0 0.5 1 VF / V 1.5 2 Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj October 1994 4 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast MECHANICAL DATA Dimensions in mm Net Mass: 2 g BYW29F series 10.2 max 5.7 max 3.2 3.0 0.9 0.5 4.4 max 2.9 max 4.4 4.0 7.9 7.5 17 max seating plane 3.5 max not tinned 4.4 13.5 min k 0.4 M a 0.9 0.7 0.55 max 1.3 5.08 top view Fig.12. SOD100; The seating plane is electrically isolated from all terminals. Notes 1. Accessories supplied on request: refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1994 5 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast DEFINITIONS Data sheet status Objective specification Product specification Limiting values BYW29F series This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1994 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1994 6 Rev 1.100 |
Price & Availability of BYW29F
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |